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内容説明 This book on Double-Gates devices and circuit is unique and aims to reinforce the synergy between the research activities on CMOS sub-32nm devices and the design of elementary cells. The goal is to point out how we can take advantage of new transistor structures to come up with new basic cells and concepts that exploit the electrical features of these new devices and the breakthrough they bring. Planar Double-Gate Transistor will mainly focus on SOI CMOS transistors， fully depleted with double independent planar Gates (Independent Planar Double Gates Transistors: IPDGT)， a potential candidate for the sub-32 nm technological nodes as planned by the current ITRS Roadmap.